Thyristor T221N 6...18 OLD Part Number Infineon Replacement

Infineon OLD Part Number T221N
Average on-state current, IT(AV)M (TC) 221A (85ºC)
Voltage, VDRM/VRRM 600-1800 V
Dimensions 270SW41M24
Datasheet
Replacement AS ENERGITM ATS221N
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Phase control stud thyristor ATS221N AS ENERGITM is a replacement, analogue, alternative and equivalent semiconductor device for SCR thyristor T221N 6...18 (OLD Part Number) Infineon Technologies, Eupec.

Phase control thyristor ratings: T221N 600V, T221N 800V, T221N 1000V, T221N 1200V, T221N 1400V, T221N 1600V, T221N 1800V.

Average forward on-state current ITAV221 ampere, repetitive peak forward and reverse blocking voltage VDRM/VRRM600-1800 V. Phase control thyristor are designed to convert and control DC and AC currents. "Air-cooled heatsinks O series for stud devices" for thyristor cooling are also available to order.

Air and water heat sinks are used to cool the thyristors. To provide reliable thermal and electrical contact with the heatsink a tightening torque Md must be observed during assembly. For better heat dissipation of thyristor during assembly, heat conducting paste is used (this is a recommendation and is not a prerequisite for installation).

Features: thyristors are supplied in stud design. The base of the thyristor is the anode, the flexible power lead is the cathode, the flexible wire exiting the base of the power lead is the auxiliary cathode, the flexible wire exiting the case is the control electrode (gate). This thyristors are notable for their ability to be used on moving parts.

Thyristors AS ENERGITM have the following features: low static and dynamic losses, high values of VDRM/VRRM, extensive experience of using the devices in various industries, range of voltages from 100 to 9000 V and amperages from 100 to 15000 A, high resistance to thermal and electric cycling, natural or forced air cooling.

Specifications and parameters, datasheet PDF, dimensions, drawings are listed below.

Our company provides a quality guarantee for thyristors of 2 years from the date of purchase. When supplying thyristors, if necessary, we provide technical passport and certificate of conformity.

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The final price for phase control stud thyristors depends on the voltage class, quantity, delivery terms, manufacturer, country of origin and form of payment.

General specifications of OLD Part Number Phase Control Stud Thyristor Infineon and Replacement:

Thyristors specifications T221N
Maximum allowable average forward current (Case temperature) IT(AV)M (TC) 221 A (85ºC)
Repetitive pulsed closed state voltage; repetitive pulsed reverse voltage VDRM/VRRM 600-1800 V
RMS on-state current ITRMSM 450 A
Surge on-state current ITSM 5.7 kA
Safety factor I2t 163 kA2·s
Threshold voltage VT0 1.10 V
On-state slope resistance rT 0.75 mΩ
Critical rate of rise of on-state current (diT/dt)cr 150 A/µs
Turn-off time, max tq 200 µs
Critical rate of rise of off-state voltage, min (dVD/dt)cr 1000 V/µs
Gate trigger direct voltage, max VGT 2.0 V
Gate trigger direct current, max IGT 200 mA
Temperature of p-n junction Tvj max 125 ºC
Thermal resistance, junction to case Rth(j-c) 0.1200 ºC/W
Dimensions mm 270SW41M24
Replacement AS ENERGITM type ATS221N
Datasheet PDF

Part Numbering Guide for Phase Control Thyristors:

A TS 221 N 18 E O F
A brand AS ENERGITM
TS Product group: Thyristor Stud.
221 Average on-state current IT(AV), Amp.
N Phase control device.
18 Voltage class VRRM / 100.
E Housing (package) type: stud housing.
O Turn off time tq: no guaranteed.
F dv/dt class:
С: 500 V/μs
F: 1000 V/μs
H: 2000 V/μs

Polarity (anode, cathode, gate) of power stud thyristors:

Thyristor polarity Stud thyristors

High Power Semiconductors AS ENERGITM

Our company is engaged in the manufacturer and sale of wide range of power semiconductors (power thyristors, modules, rectifier diodes, avalanche, rotor and welding diodes, triacs etc.) currents up to 15000A and voltages to 9000V, and air and water heatsinks to them.
You can buy semiconductor devices in any volumes, and when ordering large lots, the price will be lower. We have earned the trust of customers and supply products all over the world.

For questions regarding the acquisition of Power Thyristors, Diodes, Modules send an email request to:

[email protected]

And we will provide you a commercial offer for delivery.
For a large number, we will provide an individual price!!!

Estamos abiertos a fabricar productos en nuestras instalaciones de producción
de acuerdo con sus peticiones y tarea técnica.


Galería de fotos

La galería de fotos muestra una variedad de dispositivos semiconductores, chips semiconductores y SCRs producidos por AS ENERGITM, así como ejemplos de informes de prueba.


Installation recommendations for power stud mount thyristors:

Assembling stud thyristor with a heatsink

The reliability of heat transfer and electrical contact between the mating surfaces of the thyristor and the cooler over the entire temperature range is ensured by appropriate torque.

Before assembly you should perform visual inspection (1) contact surfaces for mechanical damages and wipe (2), soaked with alcohol (toluene, gasoline, acetone).

To improve the parameters of heat transfer it is recommended to lubricate (3) a thin layer of silicone thermal conductive paste before the assembly, which is not a mandatory condition for installation.

After installation, the fasteners (nuts and washers) must be additionally secured against corrosion.


Tips and recommendations for power thyristors:

The power thyristors should not be operated for long periods of time at their limit load for all parameters. In this case, the safety factor is determined by the required degree of reliability of the device.

Replace a failed power thyristor with a thyristor that matches the parameters of the one being replaced.

Supercooling must be provided when operating in an environment with an elevated ambient temperature.

Periodic cleaning of power thyristors and coolers to remove dust and contaminants is recommended to ensure proper heat dissipation.

Inductive current dividers (often twisted toroidal wire) should be used to equalize currents between power thyristors connected in parallel. The most popular connection methods are closed circuit, common coil circuit, or power thyristor. The efficiency of current dividers in this case is determined by the cross section of the magnetic wire.

Prevention of voltage unbalance when power thyristors are connected in series is achieved by using shunt resistors connected in parallel with each thyristor. Voltage equalization in transient conditions is provided by connecting capacitors in parallel to each thyristor.

Device under voltage

It is strictly forbidden to touch power thyristors under high voltage during operation.


icon ¿Por qué elegir AS ENERGITM?

  • Instalaciones de producción propias, incluida la producción de chips de silicio semiconductores
  • Marca europea - calidad 100%, precio favorable, plazos de producción cortos
  • Más de 20 años de experiencia en la industria de semiconductores
  • Clientes de más de 50 países confían en nosotros
  • 20000 artículos en la línea de productos para corrientes de 10A a 15000A, tensiones de 100V a 9000V
  • Producimos análogos de productos de otros fabricantes
  • Calidad certificada garantizada, periodo de garantía de funcionamiento - 2 años

 

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Nuestros productos están certificados y cumplen con los estándares internacionales.
Nuestra empresa ofrece una garantía de calidad para los productos de 2 años.
Proporcionamos certificados de conformidad, informes de fiabilidad, hojas de datos y pasaportes técnicos a solicitud del cliente.

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Cada producto se somete a pruebas de los parámetros principales, y se proporcionan informes de prueba con los parámetros de cada producto.

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AS ENERGITM fabrica y suministra semiconductores de potencia a más de 50 países de todo el mundo.

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Entregamos nuestros productos en todo el mundo con los servicios de empresas de logística: DHL, TNT, UPS, EMS, Fedex, Aramex.
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AS ENERGITM Fabricación de semiconductores

Nuestro catálogo de productos incluye diodos rectificadores, tiristores de control de fase en diseño de disco y perno, diodos y tiristores de avalancha, tiristores de conmutación rápida, de alta frecuencia, de recuperación rápida, diodos de soldadura y de rotor, triacs, puentes rectificadores, módulos de potencia (tiristores, diodos, tiristores-diodos, IGBT) y disipadores de calor por aire y agua para ellos.

Los diodos y tiristores de potencia se fabrican para corrientes desde 10A hasta 15000A y un rango de voltaje de 100V a 9000V.
Los módulos de diodos y tiristores de potencia se producen en un rango de corriente de 25A hasta 1250A y voltaje de 400V a 4400V.
El catálogo de semiconductores de potencia también incluye dispositivos equivalentes, de reemplazo, análogos y alternativos de fabricantes globales.


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